Location
Carson Taylor Hall Rm 322
Start Date
10-1-2019 3:30 PM
Description
Due to the scaling of the device dimension, device performance is getting limited day by day. Researchers are facing new challenges in quest of sustainable solutions in device architecture and material characterization. 2D carbon-based materials are posing outstanding electrical and thermal properties; novel materials can be exploited in the electrical transport mechanism by improving device architecture. Carbon and nanodiamond-based materials are characterized in MOSFET-type device architecture for further improvement. Besides, delta-doped silicon MOSFET is simulated to overcome the shortcomings in short channel effects.
The flyer for the event can be downloaded by clicking on the blue download button.
Recommended Citation
Hasan, A Z M Nowzesh, "2D Carbon-based Device Design, Simulation and Electrical Characterization" (2019). Science Seminars. 24.
https://digitalcommons.latech.edu/science-seminars/2018-2019/schedule/24
2D Carbon-based Device Design, Simulation and Electrical Characterization
Carson Taylor Hall Rm 322
Due to the scaling of the device dimension, device performance is getting limited day by day. Researchers are facing new challenges in quest of sustainable solutions in device architecture and material characterization. 2D carbon-based materials are posing outstanding electrical and thermal properties; novel materials can be exploited in the electrical transport mechanism by improving device architecture. Carbon and nanodiamond-based materials are characterized in MOSFET-type device architecture for further improvement. Besides, delta-doped silicon MOSFET is simulated to overcome the shortcomings in short channel effects.
The flyer for the event can be downloaded by clicking on the blue download button.